Differential reflection dynamics in InAsxP1-x/InP (x≤0.35) strained-multiple-quantum wells
Identifieur interne : 002329 ( Chine/Analysis ); précédent : 002328; suivant : 002330Differential reflection dynamics in InAsxP1-x/InP (x≤0.35) strained-multiple-quantum wells
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Abstract
Using the pump-probe technique, we have observed time-resolved differential reflection in InAsxP1-x/InP (x≤0.35) strained-multiple-quantum wells. The experimental results show that barrier height, interface roughness and well width influence strongly the differential reflection dynamics. For samples with the same interface quality and almost the same well width, the delay time of the differential reflection decreases with increasing barrier height, while for the sample with rough interface and narrower wells, the delay time of the differential reflection is much slower, although it has a larger barrier height. To understand the experimental results, we have performed a simulation study of temporal and spatial evolutions of photoexcited carriers in the samples, and the influence of various physics processes on the photoexcited carrier dynamics has been discussed. From the calculated and the measured results, we conclude that carrier diffusion in the cap layer and the barriers plays a dominant role in determining the differential reflection dynamics. © 1998 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Differential reflection dynamics in InAs<sub>x</sub>P<sub>1-x</sub>/InP (x≤0.35) strained-multiple-quantum wells</title><author><name sortKey="Zhao, Y G" uniqKey="Zhao Y">Y.-G. Zhao</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Mesoscopic Physics Laboratory, Peking University, Beijing 100871, Peoples Republic of China</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Physics and Mesoscopic Physics Laboratory, Peking University, Beijing 100871</wicri:regionArea><placeName><settlement type="city">Pékin</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>National Laboratory for Superlattices and Microstructures, Beijing 100083, Peoples Republic of China</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>National Laboratory for Superlattices and Microstructures, Beijing 100083</wicri:regionArea><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Zou, Y H" uniqKey="Zou Y">Y.-H. Zou</name></author><author><name sortKey="Huang, X L" uniqKey="Huang X">X.-L. Huang</name></author><author><name sortKey="Wang, J J" uniqKey="Wang J">J.-J. Wang</name></author><author><name sortKey="Qin, Y D" uniqKey="Qin Y">Y.-D. Qin</name></author><author><name sortKey="Masut, R A" uniqKey="Masut R">R. A. Masut</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Groupe de Recherche en Physique et Technologie des Couches Minces (GCM) et Departement de Genie Physique, Ecole Polytechnique de Montreal, C. P. 6079, Succ. Centre-Ville, Montreal, Quebec H3C 3A7, Canada</s1><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Canada</country><wicri:regionArea>Groupe de Recherche en Physique et Technologie des Couches Minces (GCM) et Departement de Genie Physique, Ecole Polytechnique de Montreal, C. P. 6079, Succ. Centre-Ville, Montreal, Quebec H3C 3A7</wicri:regionArea><wicri:noRegion>Quebec H3C 3A7</wicri:noRegion></affiliation></author><author><name sortKey="Beaudoin, M" uniqKey="Beaudoin M">M. Beaudoin</name></author></titleStmt><publicationStmt><idno type="inist">98-0187347</idno><date when="1998-04-15">1998-04-15</date><idno type="stanalyst">PASCAL 98-0187347 AIP</idno><idno type="RBID">Pascal:98-0187347</idno><idno type="wicri:Area/Main/Corpus">017451</idno><idno type="wicri:Area/Main/Repository">016060</idno><idno type="wicri:Area/Chine/Extraction">002329</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Photoconductivity</term><term>Reflectivity</term><term>Semiconductor quantum wells</term><term>Time resolved spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866F</term><term>8530V</term><term>7847</term><term>7240</term><term>Etude expérimentale</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Puits quantique semiconducteur</term><term>Spectre résolution temporelle</term><term>Photoconductivité</term><term>Facteur réflexion</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Using the pump-probe technique, we have observed time-resolved differential reflection in InAs<sub>x</sub>P<sub>1-x</sub>/InP (x≤0.35) strained-multiple-quantum wells. The experimental results show that barrier height, interface roughness and well width influence strongly the differential reflection dynamics. For samples with the same interface quality and almost the same well width, the delay time of the differential reflection decreases with increasing barrier height, while for the sample with rough interface and narrower wells, the delay time of the differential reflection is much slower, although it has a larger barrier height. To understand the experimental results, we have performed a simulation study of temporal and spatial evolutions of photoexcited carriers in the samples, and the influence of various physics processes on the photoexcited carrier dynamics has been discussed. From the calculated and the measured results, we conclude that carrier diffusion in the cap layer and the barriers plays a dominant role in determining the differential reflection dynamics. © 1998 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>83</s2></fA05><fA06><s2>8</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Differential reflection dynamics in InAs<sub>x</sub>P<sub>1-x</sub>/InP (x≤0.35) strained-multiple-quantum wells</s1></fA08><fA11 i1="01" i2="1"><s1>ZHAO (Y.-G.)</s1></fA11><fA11 i1="02" i2="1"><s1>ZOU (Y.-H.)</s1></fA11><fA11 i1="03" i2="1"><s1>HUANG (X.-L.)</s1></fA11><fA11 i1="04" i2="1"><s1>WANG (J.-J.)</s1></fA11><fA11 i1="05" i2="1"><s1>QIN (Y.-D.)</s1></fA11><fA11 i1="06" i2="1"><s1>MASUT (R. A.)</s1></fA11><fA11 i1="07" i2="1"><s1>BEAUDOIN (M.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Mesoscopic Physics Laboratory, Peking University, Beijing 100871, Peoples Republic of China</s1><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>National Laboratory for Superlattices and Microstructures, Beijing 100083, Peoples Republic of China</s1><sZ>1 aut.</sZ></fA14><fA14 i1="03"><s1>Groupe de Recherche en Physique et Technologie des Couches Minces (GCM) et Departement de Genie Physique, Ecole Polytechnique de Montreal, C. P. 6079, Succ. Centre-Ville, Montreal, Quebec H3C 3A7, Canada</s1><sZ>6 aut.</sZ></fA14><fA20><s1>4430-4435</s1></fA20><fA21><s1>1998-04-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 1998 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>98-0187347</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Using the pump-probe technique, we have observed time-resolved differential reflection in InAs<sub>x</sub>P<sub>1-x</sub>/InP (x≤0.35) strained-multiple-quantum wells. The experimental results show that barrier height, interface roughness and well width influence strongly the differential reflection dynamics. For samples with the same interface quality and almost the same well width, the delay time of the differential reflection decreases with increasing barrier height, while for the sample with rough interface and narrower wells, the delay time of the differential reflection is much slower, although it has a larger barrier height. To understand the experimental results, we have performed a simulation study of temporal and spatial evolutions of photoexcited carriers in the samples, and the influence of various physics processes on the photoexcited carrier dynamics has been discussed. 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